The reverse snapback phenomena （RSP） on I-V characteristics of static induction thyristors （SITH） are physically researched. The I-V curves of the power SITH exhibit reverse snapback phenomena, and even turn to the conducting-state,when the anode voltage in the forward blocking-state is increased to a critical value. The RSP I-V characteristics of the power SITH are analyzed in terms of operating mechanism, double carrier injection effect, space charge effect, electron-hole plasma in the channel, and the variation in carrier lifetime. The reverse snapback mechanism is theoretically pro- posed and the mathematical expressions to calculate the voltage and current values at the snapback point are presented. The computing results are compared with the experiment values.
A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential.The results show that:the potential barrier is directly determined by channel over pinched-off factor;gate efficiency η decreases as the gate dimension α 2 and shifted gate voltage are minished,and what differs from the first-order theory is that η will tend to zero at the shifted gate voltage tends to zero when V D=0;at low current,the voltage amplification factor μ increases as the drain current rising.When the drain current reaches certain degree,the voltage amplification factor keeps almost constant.In the end,an analytical description of SIT’s characteristic suited to both triode-like and mixed I-V characteristics are obtained.The predicted I-V curves are consistent perfectly with the reported experimental ones.
