采用压电多层微悬臂梁理论分析模型,研究了一种新型PZT压电复合多层膜微悬臂梁驱动微开关的机械性能,提出了一种新的硅基PZT压电复合多层薄膜微悬臂梁驱动微开关的制作方法。利用有限元分析软件AN SY S7.0对微悬臂梁结构进行了模态分析,探讨了结构参数与微悬臂梁运动特性的关系及影响压电薄膜微开关性能的因素,进一步模拟了0.3 V工作电压下微开关的位移。结果表明,经优化后的压电薄膜微开关可进一步应用到集成化芯片系统中。
Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method （LTLM） and the circular transmission line method （CTLM） ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti（10nm）/Al（100nm）/Ni（40nm）/Au（100nm） multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet （UV） photodetectors were prepared. The dark current-voltage （I-V） characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.
