We provides a novel approach to generate low-temperature atomic oxygen anions (O-) emission using the cesium oxide-doped 12CaO.7Al2O3 (Cs2O-doped C12A7). The maximal emission intensity of O- from the Cs2O-doped C12A7 at 700℃ and 800 V/cm reached about 0.54μA/cm2, which was about two times as strong as that from the un-doped C12A7 (0.23 μA/cm2) under the same condition. The initiative temperature of the O- emission from the Cs2O-doped C12A7 was about 500 ℃, which was also much lower than the initiative temperature from the un-doped C12A7 (570 ℃) in the given field of 800 V/cm. High pure O- emission close to 100% could be obtained from the Cs2O-doped C12A7 under the lower temperature (〈550℃). The emission features of the Cs2O-doped C12A7, including the emission distribution, temperature effect, and emission branching ratio have been investigated in detail and compared with the un-doped C12A7. The structure and storage characteristics of the resulting material were also investigated via X-ray diffraction and electron paramagnetic resonance. It was found that doping Cs2Oto C12A7 will lower the initiative emission temperature and enhance the emission intensity