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KDP晶体生长习性与快速生长研究被引量:13
2000年
发现由五氧化二磷合成的KDP晶体生长原料中含有大量还原性亚磷酸盐杂质.实验表明,亚磷酸盐对晶体锥面生长有显著的抑制作用.低浓度时造成柱面扩展,在高浓度时则使整个晶体的生长速度变慢.这种原料以适当方法提纯后,用“点籽晶”技术进行快速生长实验,平均生长速度达到13.7mm/天.
傅有君高樟寿王圣来李毅平曾红罗建平段爱东
关键词:晶体生长生长习性KDP
阴离子杂质对KDP晶体生长习性的影响及快速生长研究被引量:1
2000年
Great interest is being focused on the growth technique of KDP crystal,the first choice material for the fabrication of frequency converter and electro optic switcher used in the studies of inertial confinement fusion (ICF).To reduce the cost of growth,scientists are endeavoring to promote the growth rate.The“point seed” method is one of rapid growth techniques recently developed by Lawrence Livermore National Laboratory.In the former technique,crystals are grown in all three directions at an averaged rate of 10 15mm/day. Impurities are regarded as one of the factors to inhibit the growth rate.It is generally accepted that high valence cationic ions,such as Fe 3+ ,Cr 3+ ,Al 3+ ,etc,are easy to be adsorbed on the prismatic faces and inhibit their growth.Some anions,especially those have ability to form strong hydra bond,such as phosphate derivatives (polyphosphate,metaphosphate,pyrophosphate,etc) have significant inhibiting effects on the growth of KDP pyramidal face.It is suggested that the H bonding is the key interaction force between the growing surface and the impurities.
傅有君王圣来孙洵李毅平曾红罗建平段爱东高樟寿
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