A novel SCR on-chip ESD device is proposed to protect IC chips against ESD stressing in two opposite direc- tions. The triggering voltages of four types of dual direction SCRs （DDSCR） are compared and analyzed, pMOS or nMOS are embedded into the structures to adjust their triggering voltages. Both MOSFETs embedded DDSCRs have tunable triggering voltage,low DC leakage （～pA）, and fast turn on speed snapback I-V characteristics without latch-up problem. It achieves high ESD performance of ～94V/μm. The new ESD protection devices are area efficient and can reduce the parasitic effects significantly.
