A one-dimensional fluid model is proposed to simulate the dual-frequency capacitively coupled plasma for Ar discharges. The influences of the low frequency on the plasma density, electron temperature, sheath voltage drop, and ion energy distribution at the powered electrode are investigated. The decoupling effect of the two radio-frequency sources on the plasma parameters, especially in the sheath region, is discussed in detail.
Electron cyclotron resonance radio frequency （ECR-rf） hybrid krypton-diluted oxygen plasmas were used to pattern the surfaces of diamond films with the assistance of a physical mask, while optical emission spectroscopy was employed to characterize the plasma. It was found that with krypton dilution the etching rate decreased, and also the aspect ratios of nanotips formed in micro-holes were significantly modified. The oxygen atomic densities were estimated by oxygen atom optical emission and argon actinometry. Under a microwave power of 300 W and rf bias of-300 V, the absolute density of ground-state oxygen atoms decreased from 1.3×10^12 cm^-3 to 1.4×10^11 cm^-3 as the krypton dilution ratio increased to 80%, accompanied by the decrease in the plasma excitation temperature. It is concluded that oxygen atoms play a dominant role in diamond etching. The relative variations in the horizontal and vertical etching rates induced by the addition of krypton are attributed to the observations of thicker nanotips at a high krypton dilution ratio.
Effect of C：F deposition on SiCOH etching in a CHF3 dual-frequency capacitively couple plasma, driven by a high-frequency source of 60 MHz （HF） and a low-frequency source of 2 MHz （LF） simultaneously, is investigated. With the increase in LF power, the change of C：F layer from dense C：F layer to porous C：F layer and further to C：F filling gaps was observed, which led to the transition from films deposition to films etching. The change of C：F layer is related to the bombardment by energetic ions and CF2 concentration in the plasma. As the LF power increased to 35 - 40 W, the energetic ions and the low CF2 concentration led to a suppression of C：F deposition. Therefore, the SiCOH films can be etched at higher LF power.
The characteristics of SiCOH low dielectric constant film treated by a trifluromethane （CHF3） electron cyclotron resonance （ECR） plasma was investigated. The flat-band voltage VFB and leakage current of the Cu/SiCOH/Si structure, and the hydrophobic property of the SiCOH film were obtained by the measurements of capacitance-voltage, current-voltage and water contact angle. The structures of the SiCOH film were also analyzed by Fourier transform infrared spectroscopy and atomic force microscopy. The CHF3 plasma treatment of the SiCOH film led to a reduction in both the fiat-band voltage VFB shift and leakage current of the Cu/SiCOH/Si structure, a decrease in surface roughness, and a deterioration of the hydrophobic property. The changes in the film＇s characteristics were related to the formation of Si-F bond, the increase in Si-OH bond, and the C：F deposition at the surface of the SiCOH film.
