The coupled resonator-induced transparency （CRIT） phenomenon, which is analogous to electromagnetically induced transparency in atomic systems, can occur in an original integrated optical resonator system due to the coherent interference of the coupled optical resonators. The system was composed of three ring resonators on silicon, each with the same cavity size, and the optical coupling to the input and output ports was achieved using grating with a power coupling efficiency of 36%. A CRIT resonance whose spectrum shows a narrow transparency peak with a low group velocity was demonstrated. The quality factor of the ring resonator can attain a value up to 6x 104, and the harmonic wavelength can be controlled by adjusting the temperature. The through and drop transmission spectra of the resonator are reconciled well with each other and also consistent well with the theoretical analysis.
To research the effect of a deposited SiO2 insulating layer on the resonance frequency modulation of an SOI nanowaveguide ring cavity during integration fabrication, a rib waveguide ring resonator was systemati- cally designed and fabricated. SiO2 insulating layers with different thicknesses were deposited for analysis of the frequency shift characteristics. By testing the resonance transmission spectrum power of this structure, it is found that there are blue shifts after SiO2 deposition, and the frequency shift value of a structure with a 500 nm SiO2 insulating layer deposited is 0.8 nm, that is 0.24 THz at the resonance point where wavelength is around 1550 nm. Taking advantage of this conclusion, efficient optical modulation is available by choosing different frequency band resonance wavelengths to narrow the frequency modulation range.
