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国家自然科学基金(10405005)

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ICP-CVD制备氟化非晶碳(a-C:F)薄膜的研究被引量:3
2009年
本文使用CH2F2为源气体,利用电感耦合等离子体增强化学气相沉积(ICP-CVD)法在不同放电模式(连续或脉冲)、沉积气压、射频功率和位置下制备了a-C∶F薄膜。用原子力显微镜(AFM)观察了薄膜的表面形貌,通过FTIR、XPS对其结构进行了表征。研究结果表明:放电模式、放电气压、射频功率、基底位置均对薄膜的表面粗糙度(RMS)和组成具有重要的影响。在脉冲波模式下,增加放电气压,薄膜RMS值的变化呈现出先降低后升高的变化趋势;基底距离线圈的距离越远,所沉积薄膜的RMS值越小。而在连续波模式下,距离线圈较远的B、C位置薄膜的RMS值却相对较高。增加放电功率导致沉积薄膜的RMS值较小。本文也对CH2F2等离子体进行了发射光谱(OES)诊断研究。结果表明,对比脉冲波模式,连续波放电时等离子体中含碳物种明显减少。结合表征结果和OES结果对薄膜的生长机理进行了探讨。
谷建东李东明冯志庆牛金海刘东平
关键词:氟化非晶碳薄膜原子力显微镜发射光谱
Surface properties of diamond-like carbon films prepared by CVD and PVD methods
2006年
Diamond-like carbon (DLC) films have been deposited using three different techniques: (a) electron cyclotron resonance——plasma source ion implantation, (b) low-pressure dielectric barrier discharge, (c) filtered——pulsed cathodic arc discharge, The surface and mechanical properties of these films are compared using atomic force microscopebased tests. The experimental results show that hydrogenated DLC films are covered with soft surface layers enriched with hydrogen and sp^3 hybridized carbon while the soft surface layers of tetrahedral amorphous carbon (ta-C) films have graphite-like structure, The formation of soft surface layers can be associated with the surface diffusion and growth induced by the low-energy deposition process. For typical CVD methods, the atomic hydrogen in the plasmas can contribute to the formation of hydrogen and sp^3 hybridized carbon enriched surface layers, The high-energy ion implantation causes the rearrangement of atoms beneath the surface layer and leads to an increase in film density. The ta-C films can be deposited using the medium energy carbon ions in the highly-ionized plasma.
刘东平刘艳红陈宝祥
近红外相关光谱的多元散射校正处理研究被引量:59
2007年
近红外相关光谱法可以揭示待测成分光谱吸光度数据与浓度数据之间的全光谱线性相关性,明确待测成分在近红外波段的特征吸收位置,为定标波长的优选提供了依据。但是该相关光谱法极易受到样品颗粒的散射影响而掩盖与待测成分相关的光谱信息。文章首先提出将原始近红外光谱数据进行散射校正处理后再参与相关运算得到散射校正相关光谱的思想,经过实验验证得到的散射校正相关光谱有效地降低了散射的影响,提高了相关光谱的信噪比,更加准确地表征了待测成分吸光度数据与浓度数据之间在近红外全光谱通道的线性相关性。
芦永军曲艳玲宋敏
关键词:近红外
Surface Roughness of Various Diamond-Like Carbon Films
2006年
Atomic force microscopy is used to estimate and compare the surface morphology of hydrogenated and hydrogen-free diamond-like carbon (DLC) films. The films were prepared by using DC magnetron sputtering of a graphite target, pulsed cathodic carbon arcs, electron cyclotron resonance (ECR), plasma source ion implantation and dielectric barrier discharge (DBD). The difference in the surface structure is presented for each method of deposition. The influences of various discharge parameters on the film surface properties are discussed based upon the experimental results. The coalescence process via the diffusion of adsorbed carbon species is responsible for the formation of hydrogen-free DLC films with rough surfaces. The films with surface roughness at an atomic level can be deposited by energetic ion impacts in a highly ionized carbon plasma. The hydrocarbon species dangling bonds created by atomic hydrogen lead to the uniform growth of at the a-C:H film surfaces of the ECR or DBD plasmas
刘东平刘艳红陈宝祥
Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge被引量:1
2008年
Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4Fs at room temperature under a pressure of 25~125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.
李伟谭晓东刘东平刘艳红冯忠庆陈宝佯
DBD-PECVD法制备高疏水性氟碳聚合物(a-C:F)薄膜的研究
2009年
以C4F8为放电气体,利用介质阻挡放电化学气相沉积(DBD-PECVD)法制备了氟碳聚合物(a-C:F)薄膜。使用FTIR、AFM、接触角测量仪、台阶仪对a-C:F薄膜进行了表征,研究了放电压力及沉积时间对a-C:F薄膜的沉积速率、均方根表面粗糙度(RMS)和a-C:F薄膜疏水性的影响。实验结果表明,薄膜的沉积速率随放电压力的升高而增大,最大值为193 nm.min-1;当放电压力较低时,薄膜的RMS值小于1.0 nm;放电压力较高时,薄膜的RMS值大于100 nm。无论是改变放电压力还是沉积时间,a-C:F薄膜均表现出很强的疏水特性,最大接触角(以普通滤纸为基底)可达137°。a-C:F薄膜的表面粗糙度是影响a-C:F薄膜疏水性的重要因素。
尹晔珺李东明刘东平谷建东牛金海冯志庆
关键词:接触角
介质阻挡放电等离子体沉积氟碳薄膜研究
在低气压下介质阻挡放电(DBD)等离子体中,C4F8作为源气体,在Si基底上沉积出表面致密,憎水性良好的FC薄膜根据原子力显微镜(AFM)的检测结果,随着电源放电频表面致密,憎水性良好的FC薄膜。根据原子力显微镜(AFM...
牛金海冯志庆李伟尹晔珺谷建东张莲莲刘东平
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Theoretical analysis of ion kinetic energies and DLC film deposition by CH4+ Ar (He) dielectric barrier discharge plasmas
2007年
The kinetic energy of ions in dielectric barrier discharge plasmas are analysed theoretically using the model of binary collisions between ions and gas molecules. Langevin equation for ions in other gases, Blanc law for ions in mixed gases, and the two-temperature model for ions at higher reduced field are used to determine the ion mobility. The kinetic energies of ions in CH4 + Ar(He) dielectric barrier discharge plasma at a fixed total gas pressure and various Ar (He) concentrations are calculated. It is found that with increasing Ar (He) concentration in CH4 + Ar (He) from 20% to 83%, the CH4+ kinetic energy increases from 69.6 (43.9) to 92.1 (128.5)eV, while the Ar+ (He+) kinetic energy decreases from 97 (145.2) to 78.8 (75.5)eV. The increase of CH4+ kinetic energy is responsible for the increase of hardness of diamond-like carbon films deposited by CH4 + Ar (He) dielectric barrier discharge without bias voltage over substrates.
刘艳红张家良马腾才李建刘东平
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