Phase separations have been studied for graded-indium content In_xGa_（1-x）N/GaN multiple quantum wells（MQWs） with different indium contents by means of photoluminescence（PL）,cathodeluminescence（CL） and time-resolved PL（TRPL） techniques.Besides the main emission peaks,all samples show another 2 peaks at the high and low energy parts of the main peaks in PL when excited at 10 K.CL images show a clear contrast for 3 samples,which indicates an increasing phase separation with increasing indium content.TRPL spectra at 15 K of the main emissions show an increasing delay of rising time with indium content,which means a carrier transferring from low indium content structures to high indium content structures.
