In this paper,we report on the fabrication of a top-emitting electrophosphorescent p-i-n white organic lightemitting diode on the basis of a low-reflectivity Sm/Ag semi-transparent cathode together with a thickness-optimized ZnS out-coupling layer.With a 24-nm out-coupling layer,the reflectivity of the cathode is reduced to 8% at 492 nm and the mean reflectivity is 24% in the visible area.By introducing an efficient electron blocking layer tris（1phenylpyrazolato,N,C2 ＇）iridium（III）（Ir（ppz） 3） to confine the exciton recombination area,the current efficiency and the colour stability of the device are effectively improved.A white emission with the Ir（ppz） 3 layer exhibits a maximum current efficiency of 9.8 cd/A at 8 V,and the Commission Internationale de L＇Eclairage（CIE） chromaticity coordinates are almost constant during a large voltage change of 6 V-11 V.There is almost no viewing angular dependence in the spectrum when the viewing angle is no more than 45,with a CIE x,y coordinate variation of only（±0.0025,±0.0008）.Even at a large viewing angle（75）,the CIE x,y coordinate change is as small as（±0.0087,±0.0013）.
