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国家自然科学基金(60136020)

作品数:33 被引量:94H指数:6
相关作者:郑有炓王晓亮沈波李晋闽王军喜更多>>
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33 条 记 录,以下是 1-10
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Al_xGa_(1-x)N/GaN异质结构中Al组分对二维电子气性质的影响被引量:23
2003年
通过用数值计算方法自洽求解薛定谔方程和泊松方程 ,研究了Al组分对AlxGa1 -xN GaN异质结构二维电子气性质的影响 ,给出了AlxGa1 -xN GaN异质结构二维电子气分布和面密度 ,导带能带偏移以及子带中电子分布随AlxGa1 -xN势垒层中Al组分的变化关系 ,并用AlxGa1 -xN GaN异质结构自发极化与压电极化机理和能带偏移对结果进行讨论分析 .
孔月婵郑有炓储荣明顾书林
关键词:二维电子气自发极化压电极化
GaN_(1-x)P_x薄膜的结构特性研究被引量:5
2003年
用金属有机物化学气相沉积技术在蓝宝石衬底上外延了高P组分的GaN1 -xPx薄膜 利用x射线衍射仪和拉曼光谱仪研究了P对GaN1 -xPx 晶体结构的影响 .研究结果表明 :随着P组分比的增加 ,GaN1 -xPx(0 0 0 2 )衍射峰逐渐向小角度移动 ,即晶格常数变大 ;与非掺杂GaN相比 ,GaN1 -xPx 薄膜的拉曼光谱中出现了 4个新的振动模式 ,将它们分别归因于P族团引起的准局部振动模式、Ga—P键振动引起的间隙模 ,以及来自缺陷引起的无序激活散射 .同时 ,随着P组分比的增加 ,A1 (LO)模式的频率向低频方向移动 。
陈敦军沈波张开骁邓咏桢范杰张荣施毅郑有炓
关键词:金属有机物化学气相沉积X射线衍射拉曼光谱
AlGaN/GaN High Electron Mobility Transistors on Sapphires with f_(max) of 100GHz
2005年
AIGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated. The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm. The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively. The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.
李献杰曾庆明周州刘玉贵乔树允蔡道民赵永林蔡树军
关键词:AIGAN/GANHEMTSAPPHIRE
Al/AlN/Si MIS结构的电学性质
2006年
用S i(111)上M OCVD生长的晶态A lN制备出性能良好的A l/A lN/S i(111)M IS结构,用C-V技术首次系统研究了A l/A lN/S iM IS结构的电学性质。用A l/A lN/S iM IS结构的C-V技术测量了A lN的极化特性,得出A lN层的极化强度为-0.000 92 C/m2;揭示了A lN/S i界面存在连续分布的载流子陷阱态,给出了陷阱态密度在S i禁带中随能量的分布;还观察到A lN界面层存在Et-Ev(A lN)=2.55 eV的分立陷阱中心。
周春红孔月婵席冬娟陈鹏郑有炓
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC被引量:3
2006年
AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm^2/(V·s) at room temperature and 11588cm^2/(V ·s) at 80K with almost equal 2DEG concentrations of about 1.03 × 10^13 cm^-2. High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0.27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.
王晓亮胡国新马志勇肖红领王翠梅罗卫军刘新宇陈晓娟李建平李晋闽钱鹤王占国
关键词:HEMTMOCVD
RF-MBE生长AlN/GaN超晶格结构二维电子气材料被引量:7
2003年
用射频等离子体辅助分子束外延技术 ( RF- MBE)在 c面蓝宝石衬底上外延了高质量的 Ga N膜以及 Al N/Ga N超晶格结构极化感应二维电子气材料 .所获得的掺 Si的 Ga N膜室温电子浓度为 2 .2× 10 1 8cm- 3,相应的电子迁移率为 2 2 1cm2 /( V· s) ;1μm厚的 Ga N外延膜的 ( 0 0 0 2 ) X射线衍射摇摆曲线半高宽 ( FWHM)为 7′;极化感应产生的二维电子气室温电子迁移率达到 10 86cm2 /( V· s) ,相应的二维电子气面密度为 7.5× 10 1 2 cm- 2 .
胡国新王晓亮孙殿照王军喜刘宏新刘成海曾一平李晋闽林兰英
关键词:RF-MBE二维电子气HFETALGAN/GAN
Study on Surface Morphology of GaN Growth by MOCVD on GaN/Si(111)Template
2006年
The surface morphology of GaN grown by MOCVD on GaN/Si template was studied.Rough morphology and deep pinhole defects on some surface areas of the samples were observed and studied.The formation of rough morphology is possibly related to Ga-Si alloy produced due to poor thermal stability of template at high temperature.The deep pinhole defects generated are deep down to the surface of MBE-grown GaN/Si template.The stress originated from the large thermal expansion coefficient difference between GaN and Si may be related to the formation of the pinhole defects.The surface morphology of the GaN can be improved by optimizing the GaN/Si template and decreasing the growth temperature.
Liu ZheWang JunxiWang XiaoliangHu GuoxinGuo LunchunLiu HongxinLi JianpingLi JinminZeng Yiping
关键词:GANMOCVD
Growth and Characterization of Semi-Insulating GaN Films Grown by MOCVD
2006年
High resistivity unintentionally doped GaN films were grown on (0001) sapphire substrates by metalorganic chemical vapor deposition. The surface morphology of the layer was measured by both atomic force microscopy and scanning electron microscopy. The results show that the films have mirror-like surface morphology with root mean square of 0.3 nm. The full width at half maximum of double crystal X-ray diffraction rocking curve for (0002) GaN is about 5.22 arcmin, indicative of high crystal quality. The resistivity of the GaN epilayers at room temperature and at 250 ℃ was measured to be approximate 109 and 106 Ω·cm respectively, by variable temperature Hall measurement. Deep level traps in the GaN epilayers were investigated by thermally stimulated current and resistivity measurements.
Fang Cebao Wang Xiaoliang Hu Guoxin Wang Junxi Wang Cuimei Li Jinmin
关键词:MOCVDGANRESISTIVITYTSC
Miscibility Calculation of GaN1-xPx Ternary Alloys
2006年
A theoretical calculation of the miscibility gap with considering the mismatch strain and elastic parameters was performed for the GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates based on the strictly regular solution model. The calculated results show that the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200 K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growing temperature.
Zhang Kaixiao Chen Dunjun Zhu Weihua Lin Jianwei Zhang Rong Zheng Youdou
关键词:TERNARYALLOYSMISCIBILITYSTRAIN
AlN-Si(111)异质结构界面陷阱态研究被引量:3
2004年
利用Al_AlN_Si(111)MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的Si基AlN的AlN_Si异质结构中的电荷陷阱态 .揭示了AlN_Si异质结构界面电荷陷阱态以及AlN层中的分立陷阱中心 .结果指出 :AlN层中存在Et-Ev=2 5 5eV的分立陷阱中心 ;AlN_Si界面陷阱态在Si能隙范围内呈连续分布 ,带中央态密度最低 ,Nss为 8× 10 1 1 eV- 1 cm- 2 ,对应的时间常数τ为 8× 10 - 4s ,俘获截面σn 为 1 5 8× 10 - 1 4cm2 ;在AlN界面层存在三种陷阱态 。
周春红郑有炓邓咏桢孔月婵陈鹏席冬娟顾书林沈波张荣江若琏韩平施毅
关键词:SI(111)AIN界面电荷金属有机化学气相沉积能隙态密度
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