TiAlSiN hard coatings were synthesized on high-speed steel using an arc ion enhanced magnetic sputtering hybrid system.The microstructure and hardness of the coatings at different annealing temperatures were explored by means of XRD,TEM,EDAX and Vickers indentation.The as-deposited TiAlSiN coatings were confirmed to be amorphous due to high depositing rate and low deposition temperature during the film growth.The transformation from amorphous to nanocomposites of nano-crystallites and amorphousness were observed after the annealing treatment,the microstructure of TiAlSiN coatings annealed at 800°C and 1000°C were consisted of crystalline hcp-AlN,fcc-TiN and amorphous phase,however,the coatings were only consisted of fcc-TiN and amorphous phase when annealing at 1100°C and 1200°C.Meanwhile,the formation of Al2O3 was detected on the coating surface after annealing at 1200°C and it indicated the excellent oxidation resistance of the TiAlSiN coatings under the present experimental conditions.Furthermore,the average grain size of the TiAlSiN coatings after high temperature annealing even at 1200°C was less than 30 nm and the size increased with the increasing temperature.However,the hardness of the so-deposited coatings with HV0.2N=3300 dramatically decreased with the increase of temperature and reached nearly to the hardness of TiN coatings with HV0.2N=2300.
The wavelet transform is applied to the analysis of acoustic emission signals collected during tensile test of the ZrO2-8% Y2O3 (YSZ) thermal barrier coatings (TBCs). The acoustic emission signals are de-noised using the Daubechies discrete wavelets, and then decomposed into different wavelet levels using the programs developed by the authors. Each level is examined for its specific frequency range. The ratio of energy in different levels to the total energy gives information on the failure modes (coating micro-failures and substrate micro-failures) associated with TBCs system.
A temperature-dependent model for threshold voltage and potential distribution of fully depleted silicon-on- insulator metal-oxide-semiconductor field-effect transistors is developed. The two-dimensional potential distribution function in the silicon thin film based on an approximate parabolic function has been applied to solve the two-dimensional Poisson＇s equation with suitable boundary conditions. The minimum of the surface potential is used to deduce the threshold voltage model. The model reveals the variations of potential distribution and threshold voltage with temperature, taking into account short-channel effects. Furthermore, the model is verified by the SILVACO ATLAS simulation. The calculations and the simulation agree well.
