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国防基础科研计划(51327020202)

作品数:3 被引量:3H指数:1
相关作者:王超张玉明张义门王悦湖徐大庆更多>>
相关机构:西安电子科技大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划国防基础科研计划更多>>
相关领域:电子电信更多>>

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Deep Level Transient Fourier Spectroscopy and Photoluminescence of Vanadium Acceptor Level in n-Type 4H-SiC
2008年
Deep level transient Fourier spectroscopy (DLTFS) measurements are used to characterize the deep impurity levels in n-type 4H-SiC by vanadium ions implantation. Two acceptor levels of vanadium at Ec - 0.81 and Ec - 1.02eV with the electron capture cross section of 7.0 × 10^16 and 6.0 × 10^-16 cm^2 are observed, respectively. Low-temperature photoluminescence measurements in the range of 1.4-3.4eV are also performed on the sample, which reveals the formation of two electron traps at 0.80 and 1. 16eV below the conduction band. These traps indicate that vanadium doping leads to the formation of two deep acceptor levels in 4H-SiC,with the location of 0.8±0.01 and 1. 1 ±0.08eV below the conduction band.
王超张义门张玉明王悦湖徐大庆
关键词:4H-SIC
Formation of Nickel Based Ohmic Contact to High Energy Vanadium Implanted n-Type 4H-SiC
2007年
The diffusion behavior of vanadium (V) implanted in SiC is investigated by secondary ion mass spec- trometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not ob- served after 1650℃ annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10^-3Ω · cmA^2 is achieved after annealing at 1050℃ for 10min in gas ambient consisting of 90% N2 and 10% H2 X-ray diffraction analysis shows the formation of Ni2 Si and graphite phase at the interface after annealing. This provides the evidence that the car- bon vacancies,resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.
王超张义门张玉明郭辉徐大庆王悦湖
钒注入4H-SiC半绝缘特性的研究被引量:3
2006年
研究了2100keV高能量钒注入4H-SiC制备半绝缘层的方法和特性,注入层的浓度分布用蒙特卡罗分析软件TRIM进行模拟.采用一种台面结构进行I-V测试,发现钒注入层的电阻率与4H-SiC层的初始导电类型有很大关系.常温下,钒注入p型和n型4H-SiC的电阻率分别为1.6×10^10和7.6×10^6Ω·cm.测量了不同退火温度下的电阻率,发现高温退火有利于钒的替位激活和提高电阻率,由于钒扩散的影响1700℃退火使得电阻率略有下降.测量了n型SiC钒注入层在20~140℃时的电阻率,计算出钒受主能级在4H-SiC中的激活能为0.78eV.
王超张玉明张义门
关键词:碳化硅半绝缘退火激活能
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