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国家自然科学基金(60736033)

作品数:89 被引量:108H指数:5
相关作者:郝跃张进城王冲冯倩马晓华更多>>
相关机构:西安电子科技大学教育部北京大学更多>>
发文基金:国家自然科学基金国家重点基础研究发展计划西安应用材料创新基金更多>>
相关领域:电子电信理学化学工程一般工业技术更多>>

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89 条 记 录,以下是 1-10
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Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization
2011年
Nonpolar a-plane GaN epilayers are grown on several r-plane sapphire substrates by metal organic chemical vapour deposition using different nucleation layers: (A) a CaN nucleation layer deposited at low temperature (LT); (B) an A1N nucleation layer deposited at high temperature; or (C) an LT thin AIN nucleation layer with an AIN layer and an A1N/A1CaN superlattice both subsequently deposited at high temperature. The samples have been characterized by Xray diffraction (XRD), atomic force microscopy and photoluminescence. The GaN layers grown using nucleation layers B and C show narrower XRD rocking curves than that using nucleation layer A, indicating a reduction in crystal defect density. Furthermore, the GaN layer grown using nucleation layer C exhibits a surface morphology with triangular defect pits eliminated completely. The improved optical property, corresponding to the enhanced crystal quality, is also confirmed by temperature-dependent and excitation power-dependent photoluminescence measurements.
张金风许晟瑞张进成郝跃
关键词:PHOTOLUMINESCENCE
High Quality GaN Epitaxial Growth on Sapphire Substrate Using High Temperature AIN Buffer Layer
High quality MOCVD GaN films with 100nm HT-AIN buffer layer have been grown on sapphire substrate. It has been...
Hao Wang~*,Jincheng Zhang,Ke Chen,Linyu Shi,Xinxiu Ou,Yue Hao Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi’an 710071,China
关键词:MOCVDAFMXRD
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背势垒层结构对AlGaN/GaN双异质结载流子分布特性的影响被引量:5
2009年
首先通过一维自洽求解薛定谔/泊松方程,研究了AlGaN/GaN双异质结构中AlGaN背势垒层Al组分和厚度对载流子分布特性的影响.其次利用低压MOCVD方法在蓝宝石衬底上生长出具有不同背势垒层的AlGaN/GaN双异质结构材料,通过汞探针CV测试验证了理论计算的正确性.理论计算和实验结果均表明,随着背势垒层Al组分的提高和厚度的增加,主沟道中的二维电子气面密度逐渐减小,寄生沟道的二维电子气密度逐渐增加;背势垒层Al组分的提高和厚度的增加能有效的增强主沟道的二维电子气限域性,但是却带来了较高的寄生沟道载流子密度,因此,在AlGaN/GaN双异质结构的设计时,需要在主沟道二维电子气限域性的提高和寄生沟道载流子密度抑制之间进行折中考虑.
张进成郑鹏天董作典段焕涛倪金玉张金凤郝跃
关键词:ALGAN/GAN双异质结构
Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk material and quantum wells
2009年
This paper calculates the wavelengths of the interband transitions as a function of the Al mole fraction of AlxGa1-xN bulk materml. It is finds that when the Al mole fraction is between 0.456 and 0.639, the wavelengths correspond to the solar-blind (250 nm to 280 nm). The influence of the structure parameters of AlyGa1-yN/GaN quantum wells on the wavelength and absorption coefficient of intersubband transitions has been investigated by solving the SchrSdinger and Poisson equations self-consistently. The Al mole fraction of the AlyGa1-yN barrier changes from 0.30 to 0.46, meanwhile the w;dth of the well changes from 2.9 nm to 2.2 am, for maximal intersubband absorption in the window of the air (3μm 〈 A 〈 5μm). The absorption coefficient of the intersubband transition between the ground state and the first excited state decreases with the increase of the wavelength. The results are finally used to discuss the prospects of GaN-based bulk material and quantum wells for a solar-blind and middle infrared two-colour photodetector.
岑龙斌沈波秦志新张国义
Characterization of GaN grown on 4H-SiC and sapphire by Raman spectroscopy and high resolution XRD被引量:1
2009年
The crystal quality, stress and strain of GaN grown on 4H-SiC and sapphire are characterized by high resolution X-ray diffraction(HRXRD) and Raman spectroscopy.The large stress in GaN leads to the generation of a large number of dislocations.The Raman stress is determined by the results of HRXRD.The position and line shape of the A1 longitudinal optical(LO) phonon mode is used to determine the free carrier concentration and electron mobility in GaN.The differences between free carrier concentration and electron mobility in GaN grown on sapphire and 4H-SiC are analyzed.
段焕涛谷文萍张进成郝跃陈炽倪金玉许昇瑞
关键词:GANRAMANXRD
Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures
2009年
This paper finds that the two-dimensional electron gas density in high Al-content A1GaN/GaN heterostructures exhibits an obvious time-dependent degradation after the epitaxial growth. The degradation mechanism was investigated in depth using Hall effect measurements,high resolution x-ray diffraction,scanning electron microscopy,x-ray photoelectron spectroscopy and energy dispersive x-ray spectroscopy.The results reveal that the formation of surface oxide is the main reason for the degradation,and the surface oxidation always occurs within the surface hexagonal defects for high Al-content AlGaN/GaN heterostructures.
张进成郑鹏天张娟许志豪郝跃
Analysis and finite element simulation of electromagnetic heating in the nitride MOCVD reactor被引量:3
2009年
Electromagnetic field distribution in the vertical metal organic chemical vapour deposition (MOCVD) reactor is simulated by using the finite element method (FEM). The effects of alternating current frequency, intensity, coil turn number and the distance between the coil turns on the distribution of the Joule heat are analysed separately, and their relations to the value of Joule heat are also investigated. The temperature distribution on the susceptor is also obtained. It is observed that the results of the simulation are in good agreement with previous measurements.
李志明郝跃张进成许晟瑞倪金玉周小伟
关键词:MOCVD
高场应力及栅应力下AlGaN/GaN HEMT器件退化研究被引量:2
2009年
采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现:应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应力下器件退化的主要原因.同时,不同栅应力下器件的退化表明,钝化只是把短时间的电流崩塌问题转化成了长时间的退化问题,它并不能从根本上完全解决AlGaN/GaN HEMT的可靠性问题.
谷文萍郝跃张进城王冲冯倩马晓华
关键词:ALGAN/GANHEMT器件应力
Influence of High-temperature AIN Buffer Layer Thickness on Properties of AlGaN/GaN Heterostructure Grown by MOCVD
The effect of the thickness of high-temperature(HT) AIN buffer layer on the properties of AlGaN/GaN heterostru...
Xinxiu Ou~(1*),Jincheng Zhang~1,Yue Hao~1,Zhihao Xu~1,Huantao Duan~1,Hao Wang~1,Lingyu Shi~1 1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University,Xi’an 710071,China
关键词:GANMOCVD
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Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures
The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by...
Sen HuangBo ShenFujun XuFang LinZhenlin MiaoJie SongLin LuZhixin QinZhijian YangGuoyi Zhang
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